preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. june 2010 doc id 17661 rev 1 1/9 9 STL75N3LLZH5 n-channel 30 v, 0.0055 ? , 19 a powerflat? (5x6) stripfet? v power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses built in g-s zener diodes application switching applications description the STL75N3LLZH5 is an n-channel stripfet?v power mosfet which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (fom). figure 1. internal schematic diagram type v dss r ds(on) max i d STL75N3LLZH5 30 v <0.0061 ? 19 a (1) 1. the value is rated according r thj-pcb powerflat? ( 5x6 ) table 1. device summary order code marking package packaging STL75N3LLZH5 75n3llzh5 powerflat? (5x6) tape and reel www.st.com
electrical ratings STL75N3LLZH5 2/9 doc id 17661 rev 1 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according r thj-c . drain current (continuous) at t c = 25 c 75 a i d (1) drain current (continuous) at t c = 100 c 47 a i d (2) 2. the value is rated according r thj-pcb. drain current (continuous) at t c = 25 c 19 a i d (2) drain current (continuous) at t c =100c 11.8 a i dm (3) 3. pulse width limited by safe operating area. drain current (pulsed) 76 a p tot (1) total dissipation at t c = 25c 60 w p tot (2) total dissipation at t c = 25c 4 w derating factor 0.03 w/c t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance juncti on-case (drain) (steady state) 2.08 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec thermal resistance junction-ambient 31.3 c/w
STL75N3LLZH5 electrical characteristics doc id 17661 rev 1 3/9 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 9.5 a v gs = 4.5 v, i d = 9.5 a 0.0055 0.0066 0.0061 0.0078 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 1510 287 40 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 19 a v gs =4.5 v figure 3 - 11.8 4 6 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =15 v, i d = 9.5 a, r g =4.7 ?, v gs =10 v figure 2 - 9.2 11 55 20 - ns ns ns ns
electrical characteristics STL75N3LLZH5 4/9 doc id 17661 rev 1 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 19 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 76 a v sd (2) 2. pulsed: pulse duration= 300 s, duty cycle 1.5%. forward on voltage i sd = 19 a, v gs =0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 19 a, di/dt = 100 a/s, v dd =25 v, tj=150 c - 24 17 1.4 ns nc a
STL75N3LLZH5 test circuits doc id 17661 rev 1 5/9 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STL75N3LLZH5 6/9 doc id 17661 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STL75N3LLZH5 package mechanical data doc id 17661 rev 1 7/9 figure 8. power flat? (5x6) drawing table 8. power flat? (5x6) mechanical data dim. mm. inch. min. typ. max. min. typ. max. a 0.80 0.83 0.93 0.031 0.32 0.036 a1 0.02 0.05 0.0007 0.0019 a3 0.20 0.007 b 0.35 0.40 0.47 0.013 0.015 0.018 d5.00 0.196 d1 4.75 0.187 d2 4.15 4.20 4.25 0.163 0.165 0.167 e6.00 0.236 e1 5.75 0.226 e2 3.43 3.48 3.53 0.135 0.137 0.139 e4 2.58 2.63 2.68 0.103 0.105 e1.27 0.050 l 0.70 0.80 0.90 0.027 0.031 0.035
revision history STL75N3LLZH5 8/9 doc id 17661 rev 1 5 revision history table 9. document revision history date revision changes 22-jun-2010 1 first release.
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